Charge Carrier Mobility: Unraveling Unprecedented Charge Carrier Mobility through Structure Property Relationship of Four Isomers of Didodecyl[1]benzothieno[3,2-b][1]benzothiophene (Adv. Mater. 33/2016)

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• 作者：Yusuke Tsutsui ; Guillaume Schweicher ; Basab Chattopadhyay ; Tsuneaki Sakurai ; Jean-Baptiste Arlin ; Christian Ruzi&#233 ; Almaz Aliev ; Artur Ciesielski ; Silvia Colella ; Alan R. Kennedy ; Vincent Lemaur ; Yoann Olivier ; Rachid Hadji ; Lionel Sanguinet ; Fr&#233 ; d&#233 ; ric Castet ; Silvio Osella ; Dmytro Dudenko ; David Beljonne ; J&#233 ; rô ; me Cornil ; Paolo Samorì ; Shu Seki and Yves H. Geerts
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：September 7, 2016
• 年：2016
• 卷：28
• 期：33
• 页码：7291
• 全文大小：5749K
• ISSN：1521-4095

文摘

Could molecular semiconductors one day compete with their inorganic counterparts? On page 7106, S. Seki, Y. H. Geerts and co-workers unravel, by field-induced time-resolved microwave conductivity measurements, an unprecedentedly high average interfacial mobility of 170 cm² V⁻¹ s⁻¹ for 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene over short length- and time-scales. Approaching for the first time the hole mobility in single-crystalline silicon, these results hold great promise for the field of organic electronics.