Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors

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• 作者：Martin Huber ; Gilberto Curatola ; Gianmauro Pozzovivo ; Ingo Daumiller ; Lauri Knuuttila ; Marco Silvestri ; Alberta Bonanni and Anders Lundskog
• 刊名：physica status solidi (a)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：213
• 期：5
• 页码：1222-1228
• 全文大小：696K
• ISSN：1862-6319

文摘

The decoupling of epitaxial factors influencing the dynamic instabilities of AlGaN/GaN metal–insulator semiconductor high-electron-mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (math-equation-construct">mage="true" class="math-equation-image">mathml="true" class="math-equation-mathml" style="display:none"><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub xmlns:w="http://www.wiley.com/namespaces/wiley" xmlns:wiley="http://www.wiley.com/namespaces/wiley/wiley" xmlns:cr="urn://wiley-online-library/content/render" xmlns="http://www.w3.org/1998/Math/MathML"><mi>Vmi><mi mathvariant="normal">thmi>msub>mml:math> shift). Secondary ion mass spectroscopy and steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration next to the channel, on the distance between the channel, and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (math-equation-construct">mage="true" class="math-equation-image">mathml="true" class="math-equation-mathml" style="display:none"><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub xmlns:w="http://www.wiley.com/namespaces/wiley" xmlns:wiley="http://www.wiley.com/namespaces/wiley/wiley" xmlns:cr="urn://wiley-online-library/content/render" xmlns="http://www.w3.org/1998/Math/MathML"><mi>Nmi><mi mathvariant="normal">smi>msub>mml:math>). This change in the math-equation-construct">mage="true" class="math-equation-image">mathml="true" class="math-equation-mathml" style="display:none"><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub xmlns:w="http://www.wiley.com/namespaces/wiley" xmlns:wiley="http://www.wiley.com/namespaces/wiley/wiley" xmlns:cr="urn://wiley-online-library/content/render" xmlns="http://www.w3.org/1998/Math/MathML"><mi>Nmi><mi mathvariant="normal">smi>msub>mml:math> itself has a significant impact on the math-equation-construct">mage="true" class="math-equation-image">mathml="true" class="math-equation-mathml" style="display:none"><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub xmlns:w="http://www.wiley.com/namespaces/wiley" xmlns:wiley="http://www.wiley.com/namespaces/wiley/wiley" xmlns:cr="urn://wiley-online-library/content/render" xmlns="http://www.w3.org/1998/Math/MathML"><mi>Vmi><mi mathvariant="normal">thmi>msub>mml:math> shift. These experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the math-equation-construct">mage="true" class="math-equation-image">mathml="true" class="math-equation-mathml" style="display:none"><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msub xmlns:w="http://www.wiley.com/namespaces/wiley" xmlns:wiley="http://www.wiley.com/namespaces/wiley/wiley" xmlns:cr="urn://wiley-online-library/content/render" xmlns="http://www.w3.org/1998/Math/MathML"><mi>Vmi><mi mathvariant="normal">thmi>msub>mml:math> shift is investigated. As long as the basic layer structure is not changed, the determination of the YL/BE ratio obtained from steady-state PL is demonstrated to be a suitable way to predict trap concentrations in the GaN channel layer.