Nanometric diamond delta doping with boron

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• 作者：James E. Butler ; Anatoly Vikharev ; Alexei Gorbachev ; Mikhail Lobaev ; Anatoly Muchnikov ; Dmitry Radischev ; Vladimir Isaev ; Valerii Chernov ; Sergey Bogdanov ; Mikail Drozdov ; Evgeniy Demidov ; Ekaterina Surovegina ; Vladimir Shashkin ; Albert Davidov ; Haiyan Tan ; Louisa Meshi ; Alexander C. Pakpour-Tabrizi ; Marie-Laure Hicks and Richard B. Jackman
• 刊名：physica status solidi (RRL) - Rapid Research Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：11
• 期：1
• 全文大小：458K
• ISSN：1862-6270

文摘

Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm²/Vs and sheet carrier concentrations to 6 × 10¹³ cm^–2, thus enabling a new class of active diamond electronic devices. (