DC-3 GHz low-noise, flat-gain-response, and high-linearity amplifier

详细信息    查看全文

• 作者：Yin-Hua Yao and Tong-Xiu Fan
• 刊名：IEEJ Transactions on Electrical and Electronic Engineering
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：12
• 期：1
• 页码：10-15
• 全文大小：847K
• ISSN：1931-4981

文摘

This paper describes the design, fabrication, and testing of a DC–3 GHz ultra-wideband low-noise amplifier (LNA) using Avago ATF-54143 enhanced-mode pseudomorphic high-electron mobility transistor. Negative feedback network is introduced to ensure unconditional stability of the LNA over the full waveband. Simulation results show that the LNA provides a gain varying between 14.872 and 14.052 dB, a noise figure (NF) of less than 2.2 dB, and voltage standing wave ratios (VSWRs) approaching 2. A high simulated output third-order intercept point (OIP₃) of >30.2 dBm is achieved. In contrast, in 1-dB bandwidth of DC–3 GHz, the measured gain is nominal at 13.10 dB. The obtained NF changes in a small range of 2–2.178 dB, and the measured VSWRs are no more than 1.64, which are better than obtained from simulation results. At the same time, OIP₃ at 1, 2, and 3 GHz is 30.3, 29.13, and 29.34 dBm, respectively, while the output at the 1-dB compression point (P_1dB) is 15.43, 14.83, and 14.33 dBm, respectively.