Metal-Semiconductor Phase-Transition in WSe<sub>2(1-sub><sub>xsub><sub>)sub>Te<sub>2sub><sub>xsub> Monolayer
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- 作者：Peng Yu ; Junhao Lin ; Linfeng Sun ; Quang Luan Le ; Xuechao Yu ; Guanhui Gao ; Chuang-Han Hsu ; Di Wu ; Tay-Rong Chang ; Qingsheng Zeng ; Fucai Liu ; Qi Jie Wang ; Horng-Tay Jeng ; Hsin Lin ; Achim Trampert ; Zexiang Shen ; Kazu Suenaga and Zheng Liu
- 刊名：Advanced Materials
- 出版年：2017
- 出版时间：January 25, 2017
- 年：2017
- 卷：29
- 期：4
- 全文大小：3117K
- ISSN：1521-4095
文摘
A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe<sub>2sub> (WSe<sub>2(1−x)sub>Te<sub>2xsub>, where x = 0%–100%). The optical bandgaps of the WSe<sub>2(1−x)sub>Te<sub>2xsub> monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.