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Na-Diffusion Enhanced p-type Conductivity in Cu(In,Ga)Se2: A New Mechanism for Efficient Doping in Semiconductors
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文摘
A new mechanism responsible for the hole concentration increase in the CIGS thin films after Na doping is proposed. At high temperature, a high concentration of Na is doped into the grains. After cooling and water rinsing, the solubility of Na becomes lower, so Na diffuses out of the grains with high concentration of Cu vacancies and hole carriers formed.

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