Correlation of Reduced Interlayer Charge Transfer with Antiphase Boundary Formation in Bi_xSn_1-xSe-NbSe₂ Heterostructures

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• 作者：Gavin Mitchson ; Sage R. Bauers ; Philip Schä ; dlich ; Jeffrey J. Ditto and David C. Johnson
• 刊名：European Journal of Inorganic Chemistry
• 出版年：2017
• 出版时间：February 03, 2017
• 年：2017
• 卷：2017
• 期：5
• 页码：950-957
• 全文大小：2665K
• ISSN：1099-0682c

文摘

Heterostructures of alloyed Bi_xSn_1–xSe layers, 0 ≤ x ≤ 1.0, interleaved with NbSe₂ monolayers, were prepared by using the modulated elemental reactants technique to investigate the occurrence of antiphase boundaries as a function of Bi concentration. A Rietveld refinement of the c-axis structure of the x = 0.50 compound revealed a reduced gap distance between the Bi plane in the Bi_xSn_1–xSe layers and the Se plane in the NbSe₂ layers and an increased internal Se–Se plane spacing within the Bi_xSn_1–xSe layers relative to the end member compounds, suggesting increased interaction between the layers at this composition. High-angle annular dark-field scanning transmission electron microscopy (HAADF STEM) images showed no antiphase boundary formation in the Bi_xSn_1–xSe layers for x = 0.24, some antiphase boundary formation when x = 0.50, and increased antiphase boundary formation for x = 0.73. Correlated with the absence of antiphase boundary formation for values of x < 0.50 and the increasing presence of antiphase boundaries for x ≥ 0.5, electrical transport measurements showed interlayer charge transfer initially increased with x, then decreased as x was increased to 0.50 and beyond.