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High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
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文摘
Low-bandgap CH<sub>3sub>NH<sub>3sub>(Pb<sub>xsub>Sn<sub>1&ndash;sub><sub>xsub>)I<sub>3sub> (0 ≤ x ≤ 1) hybrid perovskites (e.g., &asymp;1.5&ndash;1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm<sup>2sup> V<sup>&minus;1sup> s<sup>&minus;1sup>) intrinsic carrier mobilities.

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