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Ultralarge Magneto-Electroluminescence in Exciplex-Based Devices Driven by Field-Induced Reverse Intersystem Crossing
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文摘
Ultralarge magneto-electroluminescence (MEL) as high as ≈160% is achieved in donor–acceptor blend exciplex-based organic light-emitting diodes at room temperature. Such large MEL is crucially determined by the activation energy in the exciplex manifold. It is caused by the field-induced reverse intersystem crossing in the exciplexes, which is driven by a Δg spin-mixing mechanism.

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