Isoelectronic Tungsten Doping in Monolayer MoSe₂ for Carrier Type Modulation

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• 作者：Xufan Li ; Ming-Wei Lin ; Leonardo Basile ; Saban M. Hus ; Alexander A. Puretzky ; Jaekwang Lee ; Yen-Chien Kuo ; Lo-Yueh Chang ; Kai Wang ; Juan C. Idrobo ; An-Ping Li ; Chia-Hao Chen ; Christopher M. Rouleau ; David B. Geohegan and Kai Xiao
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：October 5, 2016
• 年：2016
• 卷：28
• 期：37
• 页码：8240-8247
• 全文大小：1844K
• ISSN：1521-4095

文摘

Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe₂ is converted to nondegenerate p-type monolayer Mo_1−xW_xSe₂ through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo_1−xW_xSe₂ appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized “W-rich” regions in the lattice.