71-5: In-Depth Study on Large-Area Bar-Printing and Selective-Area Direct Patterning of Metal Oxide Dielectrics for High-Performance Transistor Application

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• 作者：Myung-Han Yoon ; Won-June Lee ; Won-Tae Park ; Sungjun Park and Yong-Young Noh
• 刊名：SID Symposium Digest of Technical Papers
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：47
• 期：1
• 页码：966-969
• 全文大小：741K
• ISSN：2168-0159

文摘

A simple and unidirectional printing of sol-gel metal oxide dielectric layers via bar-coating was successfully demonstrated while the nanoscale control of ultrathin film thickness (6 ∼ 30 nm) and the excellent insulating performance were achieved. According to various physical and electrical characterizations, the present bar-printing method enabled to fabricate smooth, dense, and uniform thin oxide films which were comparable to or slightly better than those prepared by spin-coating. Finally, both semiconductor and dielectric films were successively patterned by bar-printing employing the phenomenon of selective surface wetting, leading to high-performance low-voltage all-solution processed metal oxide transistors.