High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

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• 作者：Xin Rong ; Xinqiang Wang ; Sergey V. Ivanov ; Xinhe Jiang ; Guang Chen ; Ping Wang ; Weiying Wang ; Chenguang He ; Tao Wang ; Tobias Schulz ; Martin Albrecht ; Valentin N. Jmerik ; Alexey A. Toropov ; Viacheslav V. Ratnikov ; Vladimir I. Kozlovsky ; Victor P. Martovitsky ; Peng Jin ; Fujun Xu ; Xuelin Yang ; Zhixin Qin ; Weikun Ge ; Junjie Shi and Bo Shen
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：September 28, 2016
• 年：2016
• 卷：28
• 期：36
• 页码：7978-7983
• 全文大小：1422K
• ISSN：1521-4095

文摘

Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.