High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

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• 作者：Jingli Wang ; Qian Yao ; Chun-Wei Huang ; Xuming Zou ; Lei Liao ; Shanshan Chen ; Zhiyong Fan ; Kai Zhang ; Wei Wu ; Xiangheng Xiao ; Changzhong Jiang and Wen-Wei Wu
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：October 5, 2016
• 年：2016
• 卷：28
• 期：37
• 页码：8302-8308
• 全文大小：1258K
• ISSN：1521-4095

文摘

High-performance MoS₂ transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS₂. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.