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High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
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文摘
A high-performance ReS2-based thin-film transistor and photodetector with high on/off-current ratio (104), high mobility (7.6 cm2 V−1 s−1), high photoresponsivity (2.5 × 107 A W−1), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.

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