文摘
A high-performance ReS2-based thin-film transistor and photodetector with high on/off-current ratio (104), high mobility (7.6 cm2 V−1 s−1), high photoresponsivity (2.5 × 107 A W−1), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.