High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide-Based Supramolecular Electrets

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• 作者：Wei-Yao Tung ; Meng-Hsien Li ; Dr. Hung-Chin Wu ; Hsin-Yu Liu ; Yun-Ting Hsieh and Prof. Wen-Chang Chen
• 刊名：Chemistry – An Asian Journal
• 出版年：2016
• 出版时间：May 20, 2016
• 年：2016
• 卷：11
• 期：10
• 页码：1631-1640
• 全文大小：2129K
• ISSN：1861-471X

文摘

We report pentacene-based organic field-effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH-ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1-aniline (AM1), 2-naphthylamine (AM2), 2-aminoanthracene (AM3), and 1-aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1–AM4 on the hole-trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1–AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole-trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge-retention time of 10⁴ s with an ON/OFF current ratio of around 10³–10⁴ and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.