Atomic-Monolayer MoS₂ Band-to-Band Tunneling Field-Effect Transistor

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• 作者：Yann-Wen Lan ; Carlos M. Torres Jr. ; Shin-Hung Tsai ; Xiaodan Zhu ; Yumeng Shi ; Ming-Yang Li ; Lain-Jong Li ; Wen-Kuan Yeh and Kang L. Wang
• 刊名：Small
• 出版年：2016
• 出版时间：November 2, 2016
• 年：2016
• 卷：12
• 期：41
• 页码：5676-5683
• 全文大小：1404K
• ISSN：1613-6829

文摘

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS₂ as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS₂, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.