Physically Transient Resistive Switching Memory Based on Silk Protein

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• 作者：Hong Wang ; Bowen Zhu ; Xiaohua Ma ; Yue Hao and Xiaodong Chen
• 刊名：Small
• 出版年：2016
• 出版时间：May 25, 2016
• 年：2016
• 卷：12
• 期：20
• 页码：2715-2719
• 全文大小：1021K
• ISSN：1613-6829

文摘

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10² and a retention time of more than 10⁴ s are achieved for nonvolatile memory applications.