Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

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• 作者：Mengxia Liu ; F. Pelayo Garcí ; a de Arquer ; Yiying Li ; Xinzheng Lan ; Gi-Hwan Kim ; Oleksandr Voznyy ; Lethy Krishnan Jagadamma ; Abdullah Saud Abbas ; Sjoerd Hoogland ; Zhenghong Lu ; Jin Young Kim ; Aram Amassian and Edward H. Sargent
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：June 1, 2016
• 年：2016
• 卷：28
• 期：21
• 页码：4142-4148
• 全文大小：1492K
• ISSN：1521-4095

文摘

The latest advances in colloidal-quantum-dot material processing are combined with a double-sided junction architecture, which is done by efficiently incorporating indium ions in the ZnO eletrode. This platform allows the collection of all photogenerated carriers even at the maximum power point. The increased depletion width in the device facilitates full carrier collection, leading to a record 10.8% power conversion efficiency.