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Dielectric properties and defect chemistry of La and Tb co-doped BaTiO3 ceramics
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文摘

Dielectric properties and defect chemistry of (Ba1−xLax)(Ti1−xTbx)O3 were studied.

Solid solution limit of Tb in BLTT is determined by XRD to be greater than x = 0.15.

Tb ions coexist in the mixed valence states of Ba-site Tb3+ and Ti-site Tb3+/Tb4+.

The dielectric-peak temperature (Tm) decreased linearly at a rate of −19 °C/%(Lasingle bondTb).

The x = 0.07 sample is a promising dielectric for X7U applications.

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