Dielectric properties and defect chemistry of (Ba1−xLax)(Ti1−xTbx)O3 were studied.
Solid solution limit of Tb in BLTT is determined by XRD to be greater than x = 0.15.
Tb ions coexist in the mixed valence states of Ba-site Tb3+ and Ti-site Tb3+/Tb4+.
The dielectric-peak temperature (Tm) decreased linearly at a rate of −19 °C/%(LaTb).
The x = 0.07 sample is a promising dielectric for X7U applications.