Quantum confinement effect on the electronic and optical features of InGaN-based solar cells with InGaN/GaN superlattices as the absorption layers

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• 作者：A. Laref^a ; ^b ; ^{amel_la06@yahoo.fr} ; A. Altujar^a ; S. Laref^c ; S.J. Luo^d
• 关键词：GaN-InN solar cell based material ; Photo-voltaic materials ; Optoelectronic
• 刊名：Solar Energy
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：142
• 期：Complete
• 页码：231-242
• 全文大小：1577 K
• 卷排序：142

文摘

Electronic and optical features are explored for InGaN/GaN SLs. The energy gap is flexible which covers the spectrum optical regime in InGaN/GaN SLs. InGaN/GaN SLs are useful for improving the solar cell efficiency. The optical absorption spectra varies in these SLs versus In content. The InGaN/GaN SLs are promising materials for solar cells applications.