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Radiative defects, emission and structure of ZnO nanocrystals obtained by electrochemical method
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文摘

ZnO NCs were prepared by etching Zn sheets and annealing in ambient air at 200–400 °C.

No monotonic change of crystal lattice parameters vs annealing temperature is revealed.

The correlation between varying the FE emission peak and XRD parameters is detected.

Donor-acceptor pair (DAP) nature of orange, yellow and green defects is confirmed.

The types of shallow donors and deep acceptors in DAPs have been discussed.

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