Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

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• 作者：H. Qian^a ; ^{hqian2@sheffield.ac.uk} ; K.B. Lee^a ; S. Hosseini Vajargah^b ; S.V. Novikov^c ; I. Guiney^b ; Z.H. Zaidi^a ; S. Jiang^a ; D.J. Wallis^b ; C.T. Foxon^c ; C.J. Humphreys^b ; P.A. Houston^a
• 关键词：A1. Wet etching ; A1. Semi-polar (11-22) GaN ; A3. Molecular beam epitaxy ; A3. Metalorganic chemical vapour deposition ; B1. AlGaN/GaN ; B3. Vertical Heterostructure Field Effect Transisto (VHFET)
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：185-188
• 全文大小：547 K
• 卷排序：459

文摘

A self-limiting KOH-based V-groove etching technique was developed. A novel Vertical Heterostructure Field Effect Transistor structure was proposed. An AlGaN/GaN HFET structure was successfully regrown by MBE