Magnetotransport investigations of (Ga,Mn)As/GaAs Esaki diodes under hydrostatic pressure

详细信息    查看全文

• 作者：M. Gryglas-Borysiewicz^a ; ^{Marta.Borysiewicz@fuw.edu.pl} ; A. Kwiatkowski^a ; A. Lemaî ; tre^b ; J. Przybytek^a ; K. Budzik^a ; Ł. Balcerzak^a ; M. Sawicki^c ; D. Wasik^a
• 关键词：Esaki diode ; Magnetotransport ; TAMI ; TAMR ; Magnetic anisotropy ; Magnetoresistance ; Magnetocurrent ; Hydrostatic pressure ; Spintronics
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：1875-1879
• 全文大小：1715 K
• 卷排序：396

文摘

GaMnAs/GaAs Esaki diodes were studied under hydrostatic pressure for the first time. The forward I(V) characteristics showed biexponential character. Under pressure a substantial drop of tunneling current was observed. Tunneling anisotropic magnetocurrent is barely altered by pressure.