AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

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• 作者：S.S. Miya ; ^{senzo.miya@nmmu.ac.za} ; V. Wagener ; J.R. Botha
• 关键词：A2. Growth from vapour ; A3. Metal organic vapour phase epitaxy ; B1. Antimonides ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 May, 2013
• 年：2013
• 卷：370
• 期：Complete
• 页码：177-181
• 全文大小：730 K

文摘

The growth of atmospheric pressure metal-organic vapour phase epitaxial (AP-MOVPE) GaSb and Ga_1?xIn_xSb layers with different nominal V/III ratios (1.0-2.0) at 550 ¡ãC, using trimethylantimony (TMSb), trimethylindium (TMIn) and triethylgallium (TEGa), is being reported. Ga_1?xIn_xSb layers were grown with a constant indium mole fraction in the vapour phase (x_v) in order to study the dependence of the indium mole fraction in the solid (x) on the V/III ratio. The surface morphology, crystallinity and optical properties of these layers are compared to those of GaSb layers with the aim of understanding their level of sensitivity to changes in the V/III ratio. It has been observed that the indium incorporation into GaSb increases with an increase in the V/III ratio. The shift of the free exciton/band-to-band transition in Ga_0.96In_0.04Sb with temperature follows the Varshni relation: .