Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics
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- 作者：Arvind Kumar ; Sandip Mondal ; K.S.R. Koteswara Rao ; ksrkrao@physics.iisc.ernet.in" class="auth_mail" title="E-mail the corresponding author ; raoksrk@gmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Spin-coating ; MOS ; Dielectric constant ; Thin films ; ZrO2
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：1 May 2016
- 年：2016
- 卷：370
- 期：Complete
- 页码：373-379
- 全文大小：2676 K
文摘
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Low temperature solution processed high-κ ZrO2 thin films are fabricated.
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The ultra-smooth surface (RMS 1.5 Å) are realized with spin-coating technique.
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High dielectric constant 15 and low leakage current density (4.7 × 10−9 A/cm2) were achieved.
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The current conduction behaviors show FN tunneling, TAT, and SCLC dependence.