Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates
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- 作者：M. Bennoura ; mnbnnr@gmail.com" class="auth_mail" title="E-mail the corresponding author ; L. Bouzaienea ; F. Saidia ; L. Sfaxib ; H. Maarefa
- 关键词：InAs QD&ndash ; IN&ndash ; WELL ; GaAs(11N) ; Piezo-electric field ; Strain distribution ; Coulomb interaction ; Wetting layer ; Finite elements methods ; Electronic transitions
- 刊名：Journal of Alloys and Compounds
- 出版年：2015
- 出版时间：25 October 2015
- 年：2015
- 卷：647
- 期：Complete
- 页码：110-122
- 全文大小：2472 K
文摘
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Finite element method used to calculate strain, piezoelectric field and energy gap.
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Physical properties of InAs/GaAs(11n) QDs and InGaAs/InAs/InGaAs/GaAs(11n) QD-in Well.
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Stability of relaxed strain into quantum dots and quantum dots-in-well was discussed.
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Tensile strain interface is responsible of difficulty self-assembled InAs/GaAs(111)QD.