Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient

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• 作者：Peng Xue ; ^{demosupen@buaa.edu.cn} ; Guicui Fu
• 关键词：CSTBT ; Negative gate capacitance ; Dynamic avalanche ; IGBT ; Power semiconductor device
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：35-43
• 全文大小：1990 K
• 卷排序：129

文摘

The voltage clamping mode appears in the inductive turn-off waveforms of a CSTBT under rated operating conditions. An abnormal gate voltage bump is also observed, which is known as a precursor of instable dynamic avalanche. The comparison between the inductive turn-off characteristics of the CSTBT and another FS-IGBT imply that the CS layer is the root cause of the CSTBT’s abnormal dynamic avalanche characteristics. The CS layer's impact on the dynamic avalanche is clarifed, which reveal the CSTBT’s dynamic avalanche mechanism. The negative gate capacitance effect is also investigated to clarify the mechanism of the gate voltage bump. The mixed-mode numerical simulation is utilized to reproduce the CSTBT’s dynamic avalanche behavior. The simulation results validate the proposed dynamic avalanche mechanisms.