Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

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• 作者：Daniel Tomaszewski^a ; ^{dtomasz@ite.waw.pl} ; Grzegorz Głuszko^a ; ^{ggluszko@ite.waw.pl} ; Lidia Łukasiak^b ; ^{l.lukasiak@imio.pw.edu.pl} ; Krzysztof Kucharski^a ; ^{kucharsk@ite.waw.pl} ; Jolanta Malesińska^a ; ^{jmales@ite.waw.pl}
• 关键词：MOSFET ; CMOS ; Threshold voltage ; Junction capacitance ; Parameter extraction
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：92-101
• 全文大小：4308 K
• 卷排序：128

文摘

An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.