Enhanced thermoelectric figure of merit of p-type Si_0.8Ge_0.2 nanostructured spark plasma sintered alloys with embedded SiO₂ nanoinclusions

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• 作者：Andrey Usenko^a ; ^{usenko@misis.ru" class="auth_mail" title="E-mail the corresponding author} ; Dmitriy Moskovskikh^a ; Mikhail Gorshenkov^a ; Andrey Voronin^a ; ^b ; Andrey Stepashkin^a ; Sergey Kaloshkin^a ; Dmitriy Arkhipov^a ; Vladimir Khovaylo^a
• 关键词：Thermoelectric materials ; Spark plasma sintering ; Mechanical alloying ; Silicon germanium ; Nanocomposite
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：127
• 期：Complete
• 页码：63-67
• 全文大小：1498 K

文摘

We report on thermoelectric properties of p-type boron doped nanostructured bulk Si₈₀Ge₂₀ synthesized via spark plasma technique. We demonstrate that the presence of a limited amount of nanometer-sized SiO₂ inclusions, resulting from the oxidation during processing stages is an effective way to further thermal conductivity reduction in the nanostructured Si₈₀Ge₂₀ alloys. Significant reduction of thermal conductivity and high values of Seebeck coefficient allowed us to reach a peak ZT value of about 0.72 at 800 °C in boron doped Si₈₀Ge₂₀.