Temperature-controlled synthesis and characterization of Bi₄Ge₃O₁₂ nanowires

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• 作者：Dong Sub Kwak^a ; Yong Jung Kwon^a ; Han Gil Na^a ; Tran Van Khai^a ; Chongmu Lee^b ; Hyoun Woo Kim^a ; ^{hyounwoo@hanyang.ac.kr}
• 关键词：Bi4Ge3O12 ; Nanowires ; Photoluminescence
• 刊名：Chemical Engineering Journal
• 出版年：2013
• 出版时间：15 April, 2013
• 年：2013
• 卷：222
• 期：Complete
• 页码：337-344
• 全文大小：2307 K

文摘

Varying the heating temperature of a mixture of Bi and Ge powders, we have successfully prepared Bi₄Ge₃O₁₂ nanowires. The growth at 600 ¡ãC was mainly controlled via a vapor-liquid-solid process, whereas the growth at 800 ¡ãC was dominated by a vapor-solid mechanism. Although 600 ¡ãC-grown nanowires were amorphous, being comprised of Bi, Ge, O, and Au elements, the Bi and Au elements prevalently resided in the tip, playing a catalytic role in the nanowire growth. For 800 ¡ãC-grown nanowires, both the stem and tip were mainly comprised of cubic Bi₄(GeO₄)₃ phase with additional Bi₂O₃ and GeO₂ phases. Photoluminescence spectrum of 800 ¡ãC-grown nanowires exhibited GeO₂-related emission band, as well as Bi₄Ge₃O₁₂-related ones. The magnetic measurements showed that the Bi₄Ge₃O₁₂ nanowires exhibited a hysteresis loop, indicating ferromagnetic behavior.