文摘
Bismuth manganese oxide (BiMnO3) thin films were grown on Si (100) and Si (111) substrates by RF magnetron sputtering. The properties of grown films were analyzed by X-ray diffraction (XRD), Energy dispersive analysis of X-ray Spectrum (EDX), Atomic force microscopy (AFM) and Vibrating sample magnetometer (VSM). The XRD result reveals that BiMnO3 (BMO) thin films on both the substrates are polycrystalline in nature with monoclinic structure, however the films on Si (100) showed better crystalline quality than those deposited on Si (111). It has been observed from the room temperature VSM studies that BMO/Si (100) system has high saturation magnetization of 3.7 x 10-4 emu/cm3 compared to the BMO/Si (111).