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Effect of Cu/(In+Ga) ratios on the secondary phases and the performance of Cu2InGa(S,Se)4 thin film solar cells
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文摘

C-AFM identified the relationship between current leakage and secondary phases in CIGSSe films.

Formation of Cu2−XSe or InSe phases acting as a current pathway and leading to a breakdown in the P-N junction.

An increase in Cu content caused Ga to diffuse toward the surface.

CIGSSe solar cells by sputtering in this study achieved a maximum conversion efficiency of 13.06%.

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