Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

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• 作者：J.C. Ribierre^a ; ^b ; ^{jcribierre@ewha.ac.kr} ; M. Sato^c ; A. Ishizuka^a ; ^c ; T. Tanaka^d ; S. Watanabe^e ; M. Matsumoto^e ; S. Matsumoto^c ; ¹ ; ^{smatsu@edhs.ynu.ac.jp} ; M. Uchiyama^a ; T. Aoyama^a ; ² ; ^{taoyama@riken.jp}
• 关键词：Organic field-effect transistor ; Bisazomethine dye ; J-aggregates ; Thickness dependence
• 刊名：Organic Electronics
• 出版年：2012
• 出版时间：June, 2012
• 年：2012
• 卷：13
• 期：6
• 页码：999-1003
• 全文大小：669 K

文摘

We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 ¡Á 10^? cm² V^? s^? were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.