Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

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• 作者：Fedor M. Shakhov^a ; ^c ; ^e ; ^{fed800@gmail.com} ; Andrey M. Abyzov^b ; Sergey V. Kidalov^a ; Andrei A. Krasilin^a ; ^b ; Erkki Lä ; hderanta^c ; Vasiliy T. Lebedev^d ; Dmitriy V. Shamshur^a ; Kazuyuki Takai^e ; ^{takai@hosei.ac.jp}
• 关键词：Boron-doped diamond ; High-pressure high-temperature synthesis ; Boron content ; Superconductivity ; Conducting diamond
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：103
• 期：Complete
• 页码：224-237
• 全文大小：1904 K
• 卷排序：103

文摘

The synthesis of highly boron-doped diamond from graphite with Ni-Mn catalyst at 5 GPa and 1500–1600 °C. Highest boron content as a carrier dopant (2×1020 cm−3, 0.1 at%) for boron-doped diamond synthesized with a metal catalyst. Estimates of crystalline domain size (180, 96 nm) by X-Ray diffraction and small angle neutron scattering, respectively.