850 nm IR transmissive electro-absorption modulator using GaAs micromachining

详细信息    查看全文

• 作者：Sang Hun Lee ; ^{ligyro@samsung.com}Author Vitae ; Chang Young ParkAuthor Vitae ; Jang-Woo YouAuthor Vitae ; Heesun YoonAuthor Vitae ; Yong-Chul ChoAuthor Vitae ; Yong-Hwa ParkAuthor Vitae
• 关键词：Electro-absorption modulator ; GaAs micromachining ; InGaP ; IR transmissive device
• 刊名：Sensors and Actuators A: Physical
• 出版年：2013
• 出版时间：1 August, 2013
• 年：2013
• 卷：197
• 期：Complete
• 页码：47-52
• 全文大小：1979 K

文摘

The paper relates to a transmissive electro-absorption modulator and a method of fabricating the optical modulator for 3D image capturing system. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of high-speed optical shuttering. A 20 MHz-switching high speed optical shutter is realized by GaAs based multi-layer design with electro-absorption layers combining with optical resonance cavity and GaAs micromachining based on the etching process. Thick InGaP (4¦Ë) layer was chosen for the transmissive membrane structure and etch-stop of GaAs wet etching. This layer also was n-type doped to enhance the electrical contact resistance. The transmissive window area is divided into 28 cells for a low device capacitance and a high switching speed, and the polyimide layer with low dielectric constant is embedded between p-pad and n-pad to reduce the leakage and parasitic capacitance. As a result, 49.5 % of transmittance variation and above 37.7 MHz of switching speed are obtained to guarantee the functionality of Time-of-Flight operation of 3D camera.