Dependence of Zr content on electrical properties of Bi_3.15Nd_0.85Ti_3-xZr_xO₁₂ thin films synthesized by chemical solution deposition (CSD)

详细信息    查看全文

• 作者：LuRong Wang ; ChangChun Chen ; ZhongHai Tang ; ChunHua Lu ; BenHai Yu
• 关键词：Bi_3.15Nd_0.85Ti_3-xZr_xO₁₂ thin films ; Ferroelectrics properties ; Chemical solution deposition
• 刊名：Vacuum
• 出版年：2010
• 出版时间：20 August 2010
• 年：2010
• 卷：85
• 期：2
• 页码：203-206
• 全文大小：530 K

文摘

The Bi_3.15Nd_0.85Ti_3-xZr_xO₁₂ (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO₂/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2P_r) of 50.21 μC/cm² and a low coercive field (2E_c) of 210 kV/cm.