Indium incorporation in semipolar and nonpolar InGaN grown by plasma assisted molecular beam epitaxy

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• 作者：M. Sawicka^a ; ^b ; ^{sawicka@unipress.waw.pl} ; A. Feduniewicz-Żmuda^a ; M. Kryśko^a ; H. Turski^a ; G. Muziol^a ; M. Siekacz^a ; P. Wolny^c ; C. Skierbiszewski^a ; ^b
• 关键词：A3. Molecular beam epitaxy ; B1. Nitrides ; A1. Atomic force microscopy ; A1. Characterization
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：129-134
• 全文大小：1026 K
• 卷排序：459

文摘

Semipolar, nonpolar and c-plane GaN and InGaN layers were grown by PAMBE. The indium incorporation efficiency follows the relation (101̅0)<(202̅1)<<(0001). For all studied surface orientations In content is increased at low growth temperature. In content is increased for higher applied nitrogen flux. Smooth surface of semipolar and nonopolar GaN and InGaN is obtained.