Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning

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• 作者：Xiaodong Luan^a ; ^b ; ^{luanyz1988@126.com} ; Yuling Liu^a ; ^b ; Baoguo Zhang^a ; Shengli Wang^a ; Xinhuan Niu^a ; Chenwei Wang^a ; Juan Wang^a
• 关键词：Chemical mechanical planarization ; Barrier slurry ; Particle size ; Defect free ; Scratch ; Galvanic corrosion
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：170
• 期：Complete
• 页码：21-28
• 全文大小：2114 K
• 卷排序：170

文摘

The weakly alkaline barrier slurry has lower defect occurrence than conventional ones. This novel barrier slurry can get a clean surface witn a simple cleaning solution. It is an effective way for reducing the micro-scratches to filter out large particles exceeding 0.5μm size in the slurry The alkaline barrier slurry can also control copper line corrosion due to galvanic reaction