A pentacene field-effect transistor with light-programmable threshold voltage

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• 作者：Chengang Feng ; Ting Mei ; Xiao Hu ; Neuzil Pavel
• 关键词：Field-effect transistor ; Pentacene ; Threshold voltage
• 刊名：Organic Electronics
• 出版年：2010
• 出版时间：November 2010
• 年：2010
• 卷：11
• 期：11
• 页码：1713-1718
• 全文大小：439 K

文摘

We report the effect of light illumination on the electrical characteristics of pentacene field-effect transistors with a large-bandgap conjugated polymer PFO as the interfacial layer. The nanostructured PFO servers as charge-trapping centers that capture charges injected from the pentacene active layer. When the device is under light illumination, the threshold voltage (V_th) can be modulated by varying positive gate biases such that the operation mode can be switched from the enhancement mode to the depletion mode. This light-programmable feature may motivate the development of this new type of organic memory devices.