Investigation on the high pressure annealing induced re-crystallization mechanism of CH₃NH₃PbI₃ film

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• 作者：Junjian Lu ; ^{lujunjian2001@126.com} ; Meixiu Wan ; Ping Wen ; Fei Luo ; Xin Liu ; Jin Wen ; Chuanyue Hu ; Jun Guo
• 关键词：Electronic materials ; Semiconductors ; Pressure induced ; CH3NH3PbI3
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：694
• 期：Complete
• 页码：1365-1370
• 全文大小：1752 K
• 卷排序：694

文摘

Mesoporous polymer film was used to construct perovskite CH3NH3PbI3 thin film. CH3NH3PbI3 crystals were oriented at the same direction on the surface of PP film. High pressure annealing induced CH3NH3PbI3 films showed better stability property.