CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
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- 作者：P.M.P. Salomé ; a ; pedro.salome@inl.int" class="auth_mail" title="E-mail the corresponding author ; J. Kellerb ; T. Tö ; rndahlb ; J.P. Teixeirac ; N. Nicoaraa ; R.-Ribeiro Andradea ; d ; D.G. Stroppaa ; J.C. Gonzá ; lezd ; M. Edoffb ; J.P. Leitã ; oc ; S. Sadewassera
- 关键词：Thin film solar cells ; Cu(In ; Ga)Se2 (CIGS) ; Buffer layers ; CdS ; Zn1&minus ; xSnxOy
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：272-281
- 全文大小：3356 K
文摘
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CIGS absorbers from the same deposition run are finished into devices with CdS and ZnSnO.
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The solar cells perform electrically at a similar level.
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C-V measurements of ZnSnO could not be explained by simple models.
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CdS provides junctions with slightly higher surface photovoltage than ZnSnO.
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Photoluminescence of CIGS/CdS showed higher defects number compared with CIGS/ZnSnO.