Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO₂ film grown on Cu foil substrate for flexible nonvolatile memory device

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• 作者：Hongjun Wang^a ; ^{balu7015@hotmail.com} ; Yuanyuan Zhu^a ; ^{zhuyuanyuan@whu.edu.cn} ; Dejun Fu^b
• 关键词：Resistive switching ; TiO2 ; Memory device ; Conducting filaments
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：2669-2671
• 全文大小：547 K
• 卷排序：695

文摘

The Ni/TiO2/Cu nonvolatile memory device is fabricated. Coexistence of bipolar and unipolar resistive switching behavior is observed. The switching behaviors are slightly degraded upon bending states. Formation and rupture of filaments constructed with oxygen vacancies is proposed.