Design of oxide-confined and temperature stable long wavelength Vertical Cavity Surface Emitting Laser for optical interconnects

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• 作者：Rohan Bajaj^a ; ^{er.rohan.bajaj@gmail.com} ; Hemant Kumar Mishra^b ; ^{hemant7778@gmail.com} ; Priyanka Goyal^a ; ^{pri_2288@yahoo.co.in} ; Gurjit Kaur^a ; ^{gurjeet_kaur@rediffmail.com} ; Brajesh Kumar Kaushik^b ; ^{bkk23fec@iitr.ac.in} ; ^{bkkaushik23@gmail.com}
• 关键词：Optical communications ; High-speed modulation ; Vertical Cavity Surface Emitting Laser (VCSEL) ; Energy efficiency ; Optical Interconnects (OIs) ; Quantum well lasers ; Distributed Bragg Reflectors (DBR)
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：131
• 期：Complete
• 页码：506-514
• 全文大小：994 K
• 卷排序：131

文摘

One of the important attributes of Vertical Cavity Surface Emitting Laser for applications in optical interconnects is stable high temperature performance. In addition to temperature insensitivity, power dissipation is other major concern in the field of on-chip optical interconnects. With ever increasing chip size and functionalities, researchers are aggressively looking for temperature stability and power reduction in each department. Also the future emerging system of on-chip devices require long wavelength laser for high capacity applications. This paper deals with the designing of oxide-confined VCSEL structure operating at long wavelength i.e. 1310 nm. Atlas Silvaco frame work is used to design VCSEL and to analyze its electrical and thermal behavior with state of the art modules. The static properties of the proposed VCSEL are analyzed at different oxide aperture diameter and temperature. It is observed that the future obligatory performance can be attained with this proposed design of VCSEL structure model even operating at low current densities and reduced oxide-aperture diameter equal to 3 μm. The average error between the simulated and analytical power conversion efficiency is less than 5%.