Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires

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• 作者：A. Laurenčí ; ková ; ^a ; ^{Agata.Laurencikova@savba.sk} ; I. Novotný ; ^b ; S. Hasenö ; hrl^a ; J. Dé ; rer^a ; P. Eliá ; &scaron ; ^a ; J. Ková ; č^b ; J. Ková ; č jr.^b ; E. Dobročka^a ; J. Nová ; k^a
• 关键词：Nanowires ; GaP ; ZnO ; MOVPE growth ; Sputtering
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：162-165
• 全文大小：2423 K
• 卷排序：395

文摘

We demonstrate covering of GaP NWs with a thin nanocrystalline Ga-doped ZnO layer using RF sputtering. Compact GaP NW/ZnO layer structure was created by alternation of ZnO deposition with ZnO etching using Ar ions. Antireflection behaviour of different types of structures consist of GaP NWs covered with nanocrystalline ZnO layer was demonstrated.