Transition metal doping of GaSe implemented with low temperature liquid phase growth

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• 作者：Nuo Lei^a ; Youhei Sato^a ; Tadao Tanabe^a ; ^{tadao.tanabe.b1@tohoku.ac.jp} ; Kensaku Maeda^b ; Yutaka Oyama^a
• 关键词：A1. Point defects ; A2. Growth from melt ; A3. Liquid phase epitaxy ; B1. Gallium compounds ; B2. Semiconducting gallium compounds ; B3. Nonlinear optical
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：94-97
• 全文大小：909 K
• 卷排序：460

文摘

GaSe crystal is grown by temperature difference method under controlled vapor pressure (TDM-CVP). Transition metal Ti is doped into the grown GaSe. Decrease of carrier concentration at room temperature is confirmed