Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

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• 作者：Jinhwan Kim^a ; Jae-Hoon Ji^a ; Sung-Wook Min^b ; Gae-Hun Jo^a ; Min-Woo Jung^a ; Min-Jae Park^a ; Sang-Kwon Lee^c ; Jung-Hyuk Koh^a ; ^{jhkoh@cau.ac.kr}
• 关键词：Sol&ndash ; gel processes ; Films ; Electrical properties ; Optical properties
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：43
• 期：4
• 页码：3900-3904
• 全文大小：971 K
• 卷排序：43

文摘

Thin films comprising 0.5 mol% aluminum-doped zinc oxide (AZO) were prepared on glass substrates by a spin-coating method for transparent conducting oxide (TCO) applications. UV laser was selected for the annealing of AZO thin films, due to the well matched energy bandgap between UV laser and AZO films. After the rapid thermal annealing (RTA) process, post UV laser annealing was carried out by varying the scan speed of the laser beam, and the effects of laser annealing on the structural, morphological, electrical, and optical properties were analyzed. The results indicated that UV laser annealing based on various scan speeds affects the microstructure, sheet resistance, and optical transmittance of the AZO thin films, compared with those of the only RTA processed thin films. X-ray diffraction (XRD) analysis showed that all films that preferentially grew normally on the substrate had a (002) peak. The optical transmittance spectra of the laser/RTA annealed AZO thin films exhibited greater than 83% transmittance in the visible region. Also, the sheet resistance (1.61 kΩ/sq) indicated that optimized UV laser annealing after the RTA process improves film conductance.