Hybrid ITO electrodes were fabricated by embedding Pt nanoclusters on p-GaN.
Hybrid ITO electrodes produced the transmittance of 90% and sheet resistance of 24 Ω/sq.
Hybrid ITO on p-GaN yielded Ohmic contact with a contact resistance of 1.3 × 10− 2 Ω cm2.
LEDs fabricated with hybrid ITO electrodes showed excellent device performances.