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Hybrid ITO transparent conductive electrodes embedded with Pt nanoclusters for enhanced output efficiency of GaN-based light-emitting diodes
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Hybrid ITO electrodes were fabricated by embedding Pt nanoclusters on p-GaN.

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Hybrid ITO electrodes produced the transmittance of 90% and sheet resistance of 24 Ω/sq.

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Hybrid ITO on p-GaN yielded Ohmic contact with a contact resistance of 1.3 × 10− 2 Ω cm2.

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LEDs fabricated with hybrid ITO electrodes showed excellent device performances.

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