Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence
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- 作者：Eunseok Oh ; Jihoon Na ; Seunghyo Lee ; Sangwoo Lim ; swlim@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Photoresist removal ; Ion implantation ; Organic solvent ; GaAs
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 July 2016
- 年：2016
- 卷：376
- 期：Complete
- 页码：34-42
- 全文大小：1745 K
文摘
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Two-step photoresist removal process using two organic solvents was developed.
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Photoresist on trench patterned GaAs was removed by two-step sequence.
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Acetonitrile with dimethyl sulfoxide removed implanted photoresists at 30 °C.
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Affinity and permeability of solvent through photoresist determine photoresist removal.