Fabrication and characterization of nitrogen doped p-ZnO on n-Si heterojunctions
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- 作者：Trilok K. Pathaka ; b ; PathakTK@ufs.ac.in" class="auth_mail" title="E-mail the corresponding author ; tpathak01@gmail.com" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Vinod Kumara ; cAuthor Vitae ; Jai PrakashaAuthor Vitae ; L.P. PurohitbAuthor Vitae ; H.C. SwartaAuthor Vitae ; R.E. Kroona ; KroonRE@ufs.ac.za" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：ZnO ; photoelectric response ; RF sputtering ; optical properties ; electrical properties
- 刊名：Sensors and Actuators A: Physical
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：247
- 期：Complete
- 页码：475-481
- 全文大小：2144 K
文摘
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P-type ZnO thin films are grown on n-type Si substrate using RF sputtering method.
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Hetrojunction behavior is confirmed by I–V measurement of the films.
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The effect of photon incident and stability of hetrojunction is also observed with respect to time duration.
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The p ZnO/n Si hetrojunction has potential application in optoelectronic devices.