Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN
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- 作者：Jie Wang jie-wang11@mails.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Tongqing Wang wtq@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guoshun Pan pangs@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xinchun Lu ; xclu@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：GaN ; Chemical mechanical polishing ; Catalyst concentration ; Photocatalytic oxidation ; Ultraviolet intensity
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：378
- 期：Complete
- 页码：130-135
- 全文大小：1771 K
文摘
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Effects of catalyst concentration and ultraviolet intensity on GaN CMP were deeply investigated.
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Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated.
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Proposing the defects removal model about this work to reveal the mechanism.